DocumentCode :
1119253
Title :
Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structures
Author :
Umimoto, H. ; Odanaka, S. ; Nakao, I.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
10
Issue :
7
fYear :
1989
fDate :
7/1/1989 12:00:00 AM
Firstpage :
330
Lastpage :
332
Abstract :
A numerical simulation of oxide thinning at convex and concave corners of trench structures is discussed. The stress effect on the oxide growth is modeled by solving oxidation kinetic equations including stress-dependent physical parameters. The different mechanism for oxide thinning at both corners has been clearly revealed by a comparison of oxide shapes obtained by cross-sectional transmission electron microscope (TEM) photographs and simulations. The oxide thinning at convex corners is caused by the stress-dependent surface reaction, and the oxide thinning at concave corners is caused by the stress-dependent oxidant diffusion.<>
Keywords :
oxidation; semiconductor technology; simulation; stress effects; transmission electron microscope examination of materials; concave corners; convex corners; cross sectional TEM photographs; numerical simulation; oxidation kinetic equations; oxide thinning; semiconductor device fabrication; stress effect; stress-dependent oxidant diffusion; stress-dependent oxide growth; stress-dependent physical parameters; stress-dependent surface reaction; transmission electron microscope; trench structures; Numerical models; Numerical simulation; Oxidation; Shape; Silicon; Stress; Temperature dependence; Temperature distribution; Viscosity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.29669
Filename :
29669
Link To Document :
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