Title :
VIB-3 accurate analysis of impact ionization effects in submicrometer MOSFET devices
Author :
Hwang, C.C. ; Dutton, R.W. ; Hess, K.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Analytical models; Bipolar transistors; CMOS technology; Current density; Electron devices; Electron mobility; Impact ionization; MOSFET circuits; Photonic band gap; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23319
