Title :
VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers
Author :
Hiraiwa, A. ; Yugami, J. ; Kusaka, Takuya ; Ohji
fDate :
11/1/1987 12:00:00 AM
Keywords :
Computational modeling; Computer simulation; Dielectric constant; Etching; Hall effect; Implants; Laboratories; Magnetic field measurement; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23321
