DocumentCode
1119279
Title
Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors
Author
Dunn, Gregory J.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
10
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
333
Lastpage
335
Abstract
The presence of an aluminum overlayer on the polysilicon gate of MOS capacitors was found to enhance the generation of interface states strongly by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduction, during the sinter, of water-related species by the aluminum, producing atomic hydrogen, is suggested as the probable cause of this behavior.<>
Keywords
aluminium; capacitors; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; silicon; sintering; Al overlayer; Al-SiO/sub 2/-Si; Fowler-Nordheim electron injection; He; MOS capacitors; interface states; ionizing radiation; poly-Si gate; semiconductor; sintering; water related species reduction; Aluminum; Contacts; Hydrogen; Interface states; Ionizing radiation; MOS capacitors; Sputter etching; Sputtering; Stress; Wet etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.29670
Filename
29670
Link To Document