Title :
Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors
Author :
Dunn, Gregory J.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
The presence of an aluminum overlayer on the polysilicon gate of MOS capacitors was found to enhance the generation of interface states strongly by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduction, during the sinter, of water-related species by the aluminum, producing atomic hydrogen, is suggested as the probable cause of this behavior.<>
Keywords :
aluminium; capacitors; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; silicon; sintering; Al overlayer; Al-SiO/sub 2/-Si; Fowler-Nordheim electron injection; He; MOS capacitors; interface states; ionizing radiation; poly-Si gate; semiconductor; sintering; water related species reduction; Aluminum; Contacts; Hydrogen; Interface states; Ionizing radiation; MOS capacitors; Sputter etching; Sputtering; Stress; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
