DocumentCode :
1119285
Title :
VIB-7 Optimization of LDD MOSFET´s using coupled 2-D simulations
Author :
Husain, Anis ; Mathur, R. ; Wu, Shiqian
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2386
Lastpage :
2386
Keywords :
Anisotropic magnetoresistance; Boron; CMOS technology; Capacitance; Computational modeling; Computer simulation; Degradation; Etching; Implants; Superconductivity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23322
Filename :
1487033
Link To Document :
بازگشت