Title :
A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications
Author :
Zirngibl, M. ; Bischoff, J.C. ; Theron, D. ; Ilegems, Marc
Author_Institution :
Inst. of Micro- & Optoelectron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
7/1/1989 12:00:00 AM
Abstract :
A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 mu m is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460 degrees C. The large size detector (200*200 mu m/sup 2/) shows bias-dependent DC gain, fast response speed (FWHM <50 ps), and reasonably low dark current.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical communication equipment; photodetectors; semiconductor superlattices; 1.3 to 1.35 micron; 200 micron; 460 degC; 50 ps; GaAs substrate; III-V semiconductors; InGaAs-GaAs; MBE; MSM device; bias-dependent DC gain; fast response speed; large size detector; low dark current; metal-semiconductor-metal detector; molecular beam epitaxy; optical communication equipment; photodetector; photoresponse; superlattice active layer; Dark current; Detectors; Gallium arsenide; Metallic superlattices; Optical buffering; Optical materials; Optical superlattices; Photodetectors; Stimulated emission; Substrates;
Journal_Title :
Electron Device Letters, IEEE
