DocumentCode
1119391
Title
Inversion-mode MOSFET´s in polycrystalline Silicon thin films: Characterization and modeling
Author
Qian, Feng ; Kim, Dae M. ; Park, Hee Kyun ; Sachitano, Jack L.
Author_Institution
Oregon Graduate Center, Beaverton, OR
Volume
34
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
2439
Lastpage
2449
Abstract
The performance of MOSFET´s in LPCVD polysilicon is characterized. Specifically, the transistor I-V behavior, transconductance, channel mobility, and leakage current are discussed in detail. These observed device characteristics are quantitatively analyzed, based on polysilicon MOSFET theory presented herein. The model utilizes the concept of the effective doping level and is analytic, tractable, and analogous to conventional bulk silicon MOSFET theory. Additionally, the adverse role of the grain boundary for device performance and the effect of grain-boundary hydrogenation in increasing the ON/ OFF current ratio are described.
Keywords
Dielectric thin films; Doping; Fabrication; Grain boundaries; Leakage current; MOSFET circuits; Semiconductor thin films; Silicon; Transistors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23333
Filename
1487044
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