Title :
Gaseous contaminants modify the friction and wear response of precious metal electrical contact alloys
Author :
Pope, Larry E. ; Peebles, Diane E.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
An in situ electrical contact resistance and friction coefficient measuring device has been installed in a scanning Auger microprobe. A pin-on-plate experimental configuration is used. This tribology system has been used to characterize the friction, wear, and electrical contact resistance of a Pd-alloy pin (ASTM B540) sliding on an Au-alloy plate (ASTM B541). Studies, with and without H2S in the atmosphere, of wear in 1.6×10-6-Torr O2, 700-Torr 5% O 2 in N2, and 700-Torr He are reported. The presence of H2S reduces the friction coefficient and decreases the wear track width on the Au alloy. The lower friction is associated with absorption and reaction of the H2S with the Au-alloy plate. In the ambients containing H2S, large accumulations of S in wear tracks are observed; however, no increase in the electrical contact resistance occurs. In the 700-Torr ambients containing H2S, Cu segregates to the wear track surfaces to the exclusion of other metallic elements and forms Cu2S layers. A concomitant shift occurs in the S and Cu Auger peak positions when the Cu2S film thickens
Keywords :
electrical contacts; gold alloys; palladium alloys; 700 Torr; ASTM B540; ASTM B541; Au-alloy plate; Cu2S formation; H2S; He; O2; O2-N2; Pd-alloy pin; S accumulation; electrical contact resistance; friction coefficient measuring device; friction modification; gaseous contaminants; pin-on-plate experimental configuration; precious metal electrical contact alloys; scanning Auger microprobe; sliding contacts; tribology system; wear modification; wear response; Atmosphere; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Friction; Gold; Helium; Pollution measurement; Tribology;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on