Characterization of the inverse-narrow-width effect

The inverse-narrow-width effect, the reduction in the threshold voltage with decreasing device width, is modeled and experimentally measured. A fringing gate capacitance model is extended to include the effects of the sidewall interface charge. Two- and three-dimensional simulations are used to illustrate the enhanced sidewall potential and current, and the effect of sidewall interface charge on the electrical behavior of MOSFET´s with fully recessed isolation oxides. We compare the closed-form analytical threshold voltage expression developed with experimental data from small-geometry NMOS devices and find very good agreement.