DocumentCode
1119457
Title
The effect of channel implants on MOS transistor characterization
Author
Booth, Richard V. ; White, Marvin H. ; Wong, Hon-Sum ; Krutsick, Thomas J.
Author_Institution
Lehigh University, Bethlehem, PA
Volume
34
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
2501
Lastpage
2509
Abstract
MOS device characterization involves the extraction of parameters from electrical measurements. A nonuniform channel doping profile can make such characterization ambiguous since device parameters are usually based upon a uniform doping profile model. In this paper, we solve the one-dimensional Poisson´s equation for several doping profiles and show the impact of a nonuniform doping profile on the threshold surface potential, threshold voltage, normal field mobility degradation, and transconductance.
Keywords
Degradation; Doping profiles; Electric variables measurement; Implants; MOS devices; MOSFETs; Poisson equations; Semiconductor process modeling; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23341
Filename
1487052
Link To Document