Title :
The effect of channel implants on MOS transistor characterization
Author :
Booth, Richard V. ; White, Marvin H. ; Wong, Hon-Sum ; Krutsick, Thomas J.
Author_Institution :
Lehigh University, Bethlehem, PA
fDate :
12/1/1987 12:00:00 AM
Abstract :
MOS device characterization involves the extraction of parameters from electrical measurements. A nonuniform channel doping profile can make such characterization ambiguous since device parameters are usually based upon a uniform doping profile model. In this paper, we solve the one-dimensional Poisson´s equation for several doping profiles and show the impact of a nonuniform doping profile on the threshold surface potential, threshold voltage, normal field mobility degradation, and transconductance.
Keywords :
Degradation; Doping profiles; Electric variables measurement; Implants; MOS devices; MOSFETs; Poisson equations; Semiconductor process modeling; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23341
