• DocumentCode
    1119526
  • Title

    Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model

  • Author

    Bagheri, Mehran

  • Author_Institution
    Bell Communications Research, Inc., Red Bank, NJ
  • Volume
    34
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    2558
  • Lastpage
    2560
  • Abstract
    The recently proposed non-quasi-static dc-to-high-frequency weak-to-strong-inversion model for the four-terminal MOSFET is improved in such a way that closer agreement with exact and experimental results can be obtained. It is shown that the modification of a single parameter leads to significant improvement in the model characteristics.
  • Keywords
    Broadband amplifiers; Capacitance; Circuit stability; Circuit synthesis; Equations; FETs; MOSFET circuits; Predictive models; Taylor series;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23349
  • Filename
    1487060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119526