DocumentCode
1119544
Title
The influence of degeneracy in the channel on long-channel MOSFET characteristics
Author
Majkusiak, B. ; Jakubowski, A. ; Lukasiak, L.
Author_Institution
Technical University of Warsaw, Warsaw, Poland
Volume
34
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
2560
Lastpage
2561
Abstract
Fermi-Dirac statistics are incorporated into the Pao-Sah model of the MOS transistor. This modification changes the description insignificantly. The comparison of characteristics computed with the use of Fermi-Dirac and Maxwell-Boltzmann statistics shows that the use of the latter causes small errors even in the case of transistors with extremely thin gate oxides.
Keywords
Conductors; Electrons; Error analysis; MOSFET circuits; Maxwell-Boltzmann distribution; Semiconductor device doping; Semiconductor process modeling; Substrates; Universal Serial Bus; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23350
Filename
1487061
Link To Document