Title :
Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
Author :
Asbeck, P.M. ; Chang, M.F. ; Wang, K.C. ; Miller, D.L. ; Sullivan, G.J. ; Sheng, N.H. ; Sovero, E. ; Higgins, J.A.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA
fDate :
12/1/1987 12:00:00 AM
Abstract :
This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmaxabove 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BVCBO) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
Keywords :
Doping; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Millimeter wave integrated circuits; Photonic band gap; Semiconductor materials; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23356
