DocumentCode :
1119652
Title :
Precise analog synapse for Kohonen feature maps
Author :
Heim, P. ; Vittoz, E.A.
Author_Institution :
Lab. d´´Electron. Gen., Ecole Polytech. Federale de Lausanne, Switzerland
Volume :
29
Issue :
8
fYear :
1994
fDate :
8/1/1994 12:00:00 AM
Firstpage :
982
Lastpage :
985
Abstract :
A plastic medium-term analog synapse is presented that fulfils the stringent specifications necessary for the Kohonen algorithm. The principle is based on a switched capacitor-like technique implementing a variable time-constant integrator. The memory leakage standard deviation is 2 mV/s for a voltage range of 2 V at room temperature and the learning gain can be varied over two decades. Its differential structure leads to good CMRR, PSRR, and charge injection cancellation. The total synapse area is &frac116; mm2 using a 3-μm self-aligned contact single-metal CMOS technology. Measurement results of a test chip are also presented
Keywords :
CMOS integrated circuits; analogue processing circuits; integrating circuits; learning (artificial intelligence); linear integrated circuits; neural chips; self-organising feature maps; 2 V; 3 micron; CMRR; Kohonen feature maps; PSRR; charge injection cancellation; differential structure; learning gain; memory leakage standard deviation; precise analog synapse; self-aligned contact single-metal CMOS technology; switched capacitor-like technique; variable time-constant integrator; Analog circuits; CMOS technology; Circuit testing; Clustering algorithms; Hardware; Pattern classification; Plastics; Semiconductor device measurement; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.297708
Filename :
297708
Link To Document :
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