Title :
Effect of higher absorption in non-lasing GaAs diodes at 300°K
Author :
Gonda, T. ; Lamorte, M.F. ; Nyul, P. ; Junker, H.
Author_Institution :
Electronic Component and Devices, Radio Corp. of America, Somerville, NJ, USA
fDate :
4/1/1966 12:00:00 AM
Abstract :
The external efficiency of the incoherent radiation in GaAs diodes is decreased typically by a factor of 10 as temperature increases in the 77°-to-300°K range. This paper shows that this decrease may be attributed to increased absorption at 300°K. The internal quantum efficiency remains constant over this temperature range.
Keywords :
Absorption; Diode lasers; Electron devices; Electronic components; Gallium arsenide; Laser modes; Optical losses; Temperature distribution; Threshold current; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1966.1073991
