DocumentCode
1119709
Title
Effect of higher absorption in non-lasing GaAs diodes at 300°K
Author
Gonda, T. ; Lamorte, M.F. ; Nyul, P. ; Junker, H.
Author_Institution
Electronic Component and Devices, Radio Corp. of America, Somerville, NJ, USA
Volume
2
Issue
4
fYear
1966
fDate
4/1/1966 12:00:00 AM
Firstpage
74
Lastpage
76
Abstract
The external efficiency of the incoherent radiation in GaAs diodes is decreased typically by a factor of 10 as temperature increases in the 77°-to-300°K range. This paper shows that this decrease may be attributed to increased absorption at 300°K. The internal quantum efficiency remains constant over this temperature range.
Keywords
Absorption; Diode lasers; Electron devices; Electronic components; Gallium arsenide; Laser modes; Optical losses; Temperature distribution; Threshold current; Zinc;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1966.1073991
Filename
1073991
Link To Document