Title :
Pulsed high-power operation of p+pnn+-avalanche diodes near avalanche resonance for mm-wave oscillators
Author :
Gaul, Lorenz ; Claassen, Manfred
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen, Germany
fDate :
8/1/1994 12:00:00 AM
Abstract :
Results of a systematic investigation by computer simulation of symmetric GaAs p+pnn+-avalanche diodes for pulsed high-power operation near avalanche resonance at millimeter-wave frequencies are presented. Different operation modes have been found at dc-current densities as high as necessary for avalanche resonance and are classified with regard to dynamic dc stability. A pin-like Misawa mode of operation with compensated space-charge of mobile and fixed charge carriers (space-charge compensated pin mode) and a quasi-Impatt mode with separated generation and drift regions are calculated to yield high RF power at high impedance level. Maximum RF-output power up to 100 W can be expected from the space-charge compensated pin mode at 1 Ω matching impedance for 60 GHz with an efficiency of 14%
Keywords :
III-V semiconductors; avalanche diodes; digital simulation; gallium arsenide; microwave oscillators; power electronics; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; 100 W; 14 percent; 60 GHz; GaAs; RF power; RF-output power; avalanche resonance; compensated space-charge; computer simulation; dc-current densities; drift regions; dynamic dc stability; generation regions; matching impedance; mm-wave oscillators; operation modes; p+pnn+-avalanche diodes; pin-like Misawa mode; pulsed high-power operation; quasi-Impatt mode; space-charge compensated pin mode; Charge carriers; Computer simulation; Diodes; Gallium arsenide; Impedance; Power generation; Radio frequency; Resonance; Resonant frequency; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
