• DocumentCode
    1119751
  • Title

    Near-single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier

  • Author

    Allam, Jeremy ; Capasso, Federico ; Alavi, Kambiz ; Cho, Alfred Y.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    8
  • Issue
    1
  • fYear
    1987
  • fDate
    1/1/1987 12:00:00 AM
  • Firstpage
    4
  • Lastpage
    6
  • Abstract
    We report the observation of very large ionization rate ratios (β/α) in multiple graded-well Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes (APD´s) grown by molecular beam epitaxy (MBE). The multiplication effects can be explained by impact ionization across the valance band-edge discontinuity of thermally generated holes which are dynamically stored in the wells. Since electrons are not confined in the graded structure, there is no multiplication of electrons by this process. This is the first observation of near-single carrier-type multiplication in a III-V semiconductor material.
  • Keywords
    Avalanche photodiodes; Charge carrier processes; Electrons; Impact ionization; Molecular beam epitaxial growth; Photomultipliers; Semiconductor materials; Solid state circuits; Superlattices; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26531
  • Filename
    1487081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119751