• DocumentCode
    1119771
  • Title

    A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits

  • Author

    Hasumi, Yuji ; Kozen, Atsuo ; Temmyo, Jiro ; Asahi, Hajime

  • Author_Institution
    NTT Electrical Communications Laboratories, Kanagawa, Japan
  • Volume
    8
  • Issue
    1
  • fYear
    1987
  • fDate
    1/1/1987 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    12
  • Abstract
    A GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) is developed which also functions as a transverse-injection laser. The epitaxial layers for the DHBT´s are grown by metalorganic vapor phase epitaxy (MOVPE). Experimentation reveals a transistor current gain of ∼ 10 and a pulsed lasing threshold of 230 mA at room temperature.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Epitaxial growth; Epitaxial layers; Gallium arsenide; High speed optical techniques; Integrated optics; Laser noise; Optical noise; Optical refraction;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26533
  • Filename
    1487083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119771