Title :
A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits
Author :
Hasumi, Yuji ; Kozen, Atsuo ; Temmyo, Jiro ; Asahi, Hajime
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
fDate :
1/1/1987 12:00:00 AM
Abstract :
A GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) is developed which also functions as a transverse-injection laser. The epitaxial layers for the DHBT´s are grown by metalorganic vapor phase epitaxy (MOVPE). Experimentation reveals a transistor current gain of ∼ 10 and a pulsed lasing threshold of 230 mA at room temperature.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Epitaxial growth; Epitaxial layers; Gallium arsenide; High speed optical techniques; Integrated optics; Laser noise; Optical noise; Optical refraction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26533
