Title :
Charge control model of the double delta-doped quantum-well field-effect transistor
Author :
Lien, Chenhsin ; Huang, Yimin ; Chien, Hungming ; Wang, Wenlong
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
8/1/1994 12:00:00 AM
Abstract :
The charge control properties of Al0.3Ga0.7As-GaAs-Al0.3Ga0.7 As quantum-well field-effect transistor (FET) with double δ-doped planes are studied theoretically. A simple capacitor-like charge control model for the doubleδ-doped quantum-well FET´s has been proposed and verified through self-consistent calculation. The threshold voltage and the capacitance can be related to the structure through simple analytical equations. The effective separation between capacitor plates is found to be the thickness of AlGaAs layer d+di +δ plus a correction term to account for the distribution of N2DEG inside the GaAs quantum well. For small well widths, only the ground-state subband is occupied and there is a simple linear relation between N2DEG and the gate bias VG. For larger well widths, electrons occupied the lowest subband, then the next higher energy subband, and the relation between the N2DEG and the VG can be divided into piece-wise linear regions
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 2DEG; Al0.3Ga0.7As-GaAs-Al0.3Ga 0.7As; capacitance; capacitor-like charge control model; double delta-doped quantum-well field-effect transistor; self-consistent calculation; subbands; threshold voltage; Doping; Electron mobility; Equations; FETs; Gallium arsenide; HEMTs; MODFET circuits; Quantum wells; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
