DocumentCode
1119808
Title
A controlled-avalanche superlattice transistor
Author
Bhattacharya, Pallab K. ; Chin, Albert ; Seo, Kwang S.
Author_Institution
University of Michigan, Ann Arbor, MI
Volume
8
Issue
1
fYear
1987
fDate
1/1/1987 12:00:00 AM
Firstpage
19
Lastpage
21
Abstract
A novel bipolar avalanche transistor is proposed. Controlled avalanche and large current output over a significant bias region is achieved by incorporating a staircase multiplication region at the base-collector junction. The III-V materials choice, device design, and computed output characteristics are presented and discussed.
Keywords
Conducting materials; Electrons; Impact ionization; Optical devices; Optical noise; Optical saturation; Optical scattering; Optical superlattices; Photonic band gap; Semiconductor superlattices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26536
Filename
1487086
Link To Document