Electron energy distribution at the insulator-semiconductor interface in AC thin film electroluminescent display devices

Author

Aguilera, Alberto ; Singh, Vijay P. ; Morton, David C.

Author_Institution

Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA

Volume

41

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1357

Lastpage

1363

Abstract

Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10 K and 300 K and to a metal interface device structure

Keywords

II-VI semiconductors; electroluminescent displays; manganese; semiconductor-insulator boundaries; zinc compounds; 10 K; 300 K; AC thin film electroluminescent display devices; ZnS:Mn; current waveforms; electron emission; electron energy distribution; field waveforms; insulator-semiconductor interface; metal interface device; tunnel current transients; Current measurement; Electroluminescent devices; Electron emission; Energy measurement; Flat panel displays; Insulation; Insulator testing; Temperature; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.297730

Filename

297730