Hot-carrier degradation behavior of N- and P-channel MOSFET´s under dynamic operation conditions

Author

Bellens, Rudi ; Groeseneken, Guido ; Heremans, Paul ; Maes, Herman E.

Author_Institution

IMEC, Leuven, Belgium

Volume

41

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1421

Lastpage

1428

Abstract

An in-depth study of the dynamic hot-carrier degradation behavior of N- and P-channel MOS transistors was performed based on the change of charge pumping and I-V characteristics. It is shown that for transistors with channel lengths ranging from 2 to 0.5 μm and frequencies up to 100 MHz the degradation under dynamic stress can completely be described as a quasi-static degradation, provided all static degradation effects are taken into account in the appropriate way. This means that the influence of post-stress effects and charge buildup or charge detrapping have to be considered

Keywords

hot carriers; insulated gate field effect transistors; semiconductor device testing; 0.5 to 2 micron; 100 MHz; I-V characteristics; N-channel MOSFET; NMOSFET; P-channel MOSFET; PMOSFET; charge buildup; charge detrapping; charge pumping characteristics; dynamic operation conditions; dynamic stress; hot-carrier degradation behavior; post-stress effects; quasi-static degradation; CMOS technology; Charge measurement; Charge pumps; Current measurement; Degradation; Frequency; Hot carriers; MOSFET circuits; Stress; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.297738

Filename

297738