DocumentCode
1119926
Title
Multistreamer regime of GaAs thyristor switching
Author
Vainshtein, S.N. ; Kilpelá, A.J. ; Kostamovaara, J.T. ; Myllylá, R.A. ; Starobinets, S.U. ; Zhilyaev, J.V.
Author_Institution
Dept. of Electr. Eng., Oulu Univ., Finland
Volume
41
Issue
8
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
1444
Lastpage
1450
Abstract
GaAs bipolar thyristors have been used to obtain current pulses of over 100 A with rise times less than 600 ps and load resistance of approximately 0.4 Ω. The maximum voltage has been shown to exceeded 500 V in some cases. To interpret the experimental results a multichannel switch regime is proposed. Analysis of the experimental data suggests the possibility of a further increase in the maximum amplitude of the current pulse
Keywords
III-V semiconductors; gallium arsenide; semiconductor switches; thyristors; 0.4 ohm; 100 A; 500 V; 600 ps; GaAs; GaAs bipolar thyristors; current pulses; load resistance; multichannel switch; multistreamer; rise times; Anodes; Charge carrier density; Conductors; Current density; Gallium arsenide; Helium; Optical pulses; Switches; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.297741
Filename
297741
Link To Document