Title :
Multistreamer regime of GaAs thyristor switching
Author :
Vainshtein, S.N. ; Kilpelá, A.J. ; Kostamovaara, J.T. ; Myllylá, R.A. ; Starobinets, S.U. ; Zhilyaev, J.V.
Author_Institution :
Dept. of Electr. Eng., Oulu Univ., Finland
fDate :
8/1/1994 12:00:00 AM
Abstract :
GaAs bipolar thyristors have been used to obtain current pulses of over 100 A with rise times less than 600 ps and load resistance of approximately 0.4 Ω. The maximum voltage has been shown to exceeded 500 V in some cases. To interpret the experimental results a multichannel switch regime is proposed. Analysis of the experimental data suggests the possibility of a further increase in the maximum amplitude of the current pulse
Keywords :
III-V semiconductors; gallium arsenide; semiconductor switches; thyristors; 0.4 ohm; 100 A; 500 V; 600 ps; GaAs; GaAs bipolar thyristors; current pulses; load resistance; multichannel switch; multistreamer; rise times; Anodes; Charge carrier density; Conductors; Current density; Gallium arsenide; Helium; Optical pulses; Switches; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
