DocumentCode
1119928
Title
InP depletion-mode microwave MISFET´s
Author
Gardner, P.D. ; Narayan, S. Yegna ; Liu, S.G. ; Bechtle, D. ; Bibby, Thomas ; Capewell, D.R. ; Colvin, S.D.
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
8
Issue
2
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
45
Lastpage
47
Abstract
Depletion-mode aligned-gate InP MISFET´s with gate lengths of 1.5-1 µm have given output power of 1.26-W/mm gate width and power-added efficiencies of up to 40 percent at 4 GHz. At 12 GHz, 0.75-W/mm gate width with 22-percent power-added efficiency was obtained. At 18 GHz, a power output of 331 mW (0.59 W/mm) with 3.1 dB of gain and 15.7-percent power-added efficiency was measured. An output power of 245 mW (0.44 W/mm) with 3-dB gain and 10.7-percent efficiency was obtained at 20 GHz.
Keywords
Capacitors; Fabrication; Gold; Hysteresis; Indium phosphide; Interface states; MISFETs; Microwave devices; Power generation; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26546
Filename
1487096
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