• DocumentCode
    1119940
  • Title

    Insulated-gate and junction-gate FET´s of CVD-Grown β-SiC

  • Author

    Furukawa, K. ; Hatano, A. ; Uemoto, A. ; Fujii, Y. ; Nakanishi, K. ; Shigeta, M. ; Suzuki, Akira ; Nakajima, S.

  • Author_Institution
    Sharp Corporation, Nara, Japan
  • Volume
    8
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    An insulated-gate field effect transistor (IGFET) and a junction-gate FET (JFET) of cubic silicon carbide (β-SiC) have been fabricated using chemical vapor deposition (CVD) growth on Si substrate. In order to improve the characteristics, a boron-doped p-layer is used under the n-channel layer. Both FET´s show clear drain characteristics for the first time using CVD-grown β-SiC.
  • Keywords
    Chemical vapor deposition; Crystals; FETs; Fabrication; Insulation; P-n junctions; Photonic band gap; Semiconductor diodes; Silicon carbide; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26547
  • Filename
    1487097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119940