• DocumentCode
    1119950
  • Title

    GaAs/AlGaAs heterojunction emitter-down bipolar transistors fabricated on GaAs-on-Si substrate

  • Author

    Tran, L.T. ; Lee, J.W. ; Shichijo, Hisashi ; Yuan, Han-tzong

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX, USA
  • Volume
    8
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    50
  • Lastpage
    52
  • Abstract
    GaAs/AlGaAs heterojunction bipolar transistors with emitter-down structure were fabricated on GaAs-on-Si substrate for the first time. A maximum current gain of 25 was measured at a collector current density of 6250 A/cm2. This value is comparable with that from similar devices fabricated on GaAs substrates. This result, along with previous work on large-scale integration of emitter-down transistors, demonstrates the potential for high-level integration of bipolar devices on GaAs-on-Si substrates.
  • Keywords
    Bipolar transistors; Circuits; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Rapid thermal annealing; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26548
  • Filename
    1487098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119950