InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET´s)

Stability problems in conventional InP metal-insulator-semiconductor field effect transistors (MISFET´s) have been overcome in InP heterojunction insulated gate FET´s (HIGFET´s) by replacing the insulator with InxAl1-xAs. We report on the fabrication and low-frequency operation of the HIGFET with a composition of x = 0.43. Transistor characteristics have been successfully modeled by an analytical MISFET model which indicate a low interfacial state density (≅ 10¹¹/cm²) and near flat-band condition.