Title :
The amorphous Si/SiC heterojunction color-sensitive phototransistor
Author :
Chang, Chun-Yen ; Chun-Yen Chang ; Fang, Y.K. ; Jwo, S.C.
Author_Institution :
National Cheng Kung University, Taiwan, Republic of China
fDate :
2/1/1987 12:00:00 AM
Abstract :
An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n+-i)/a-SiC(p+-i-n+)/Al. The device is a bulk barrier transistor with wide-bandgap amorphous SiC emitter and base. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 µs at an input light power of 5 µW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1-V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
Keywords :
Amorphous materials; Chemical vapor deposition; Glass; Heterojunctions; Indium tin oxide; Phototransistors; Plasma chemistry; Plasma devices; Silicon carbide; Stimulated emission;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26553
