DocumentCode
1120016
Title
Analysis of current-temperature-light characteristics of GaAsP light-emitting diodes
Author
Tanaka, Y. ; Toyama, T.
Author_Institution
Res. & Dev. Center, Eastman Kodak Ltd., Kanagawa, Japan
Volume
41
Issue
8
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
1475
Lastpage
1477
Abstract
The current-temperature-light characteristics of GaAsP light-emitting diodes have been studied. Functional forms of the light intensity and the temperature coefficient (temperature derivative of the light intensity) dependence on the electric current have been obtained. These functional forms agree well with experimental results
Keywords
III-V semiconductors; gallium arsenide; light emitting diodes; GaAsP; GaAsP light-emitting diodes; current-temperature-light characteristics; electric current; light intensity; temperature coefficient; Current; Electron devices; Gallium arsenide; Light emitting diodes; Light scattering; MESFETs; Maxwell equations; Particle scattering; Solid state circuits; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.297748
Filename
297748
Link To Document