Title :
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
Author :
Chow, T. Paul ; Tyagi, Ritu
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (GaxIn1-xN, AlxIn1-xN, AlxGa1-xN, and (AlN)x(SiC)1-x) offer several orders of magnitude improvement in the on-resistance and in the potential for successful operation at higher temperatures
Keywords :
power electronics; semiconductors; AlGaN; AlInN; AlN; AlNSiC; C; GaInN; GaN; InN; SiC; ZnO; diamond; figures of merit; high frequency electronic devices; high power electronic devices; high temperature operation; high-voltage unipolar power devices; intermetallics; on-resistance; potential; wide bandgap compound semiconductors; Conducting materials; Electric breakdown; Frequency; Heat sinks; Intermetallic; Photonic band gap; Semiconductor materials; Silicon carbide; Thermal conductivity; Wide band gap semiconductors;
Journal_Title :
Electron Devices, IEEE Transactions on
