DocumentCode
1120063
Title
Comments on "A new type of transistor: CBT"
Author
Vitale, G. ; Spirito, P.
Author_Institution
Dept. of Electron. Eng., Naples Univ., Italy
Volume
41
Issue
8
fYear
1994
Firstpage
1484
Lastpage
1485
Abstract
For original paper see B. Kang, W. Zhao, L. Dong and Y. Situ (ibid., vol.40, pp.1805-1811, 1993). In the above paper, a bipolar device named channel-base transistor (CBT), consisting of a vertical JFET structure operating with its gate forward-biased, has been presented. This correspondence is aimed at recalling that the CBT cannot be viewed as a "new" device, as was stated. Also, some conclusions derived concerning the physics of operation of the CBT are discussed on the basis of the theoretical and experimental work available in the literature.<>
Keywords
bipolar transistors; junction gate field effect transistors; CBT; bipolar device; channel-base transistor; forward-biased gate; vertical JFET; Analytical models; Conductivity; Displays; Doping; FETs; Low voltage; Physics; Plasma devices; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.297752
Filename
297752
Link To Document