Title :
Very-shallow low-resistivity p+-n junctions for CMOS technology
Author :
Ling, E. ; Maguire, Paul D. ; Gamble, H.S. ; Armstrong, Brian M.
Author_Institution :
Queens University of Belfast, Belfast, N. Ireland
fDate :
3/1/1987 12:00:00 AM
Abstract :
Shallow p-n junctions 110 nm deep have been fabricated using rapid thermal diffusion from a spin-on oxide source. Surface concentrations greater than 3 × 1020cm-3are possible, with sheet resistivities less than 100 Ω/sq and a maximum reverse-bias leakage at 5 V of 3 nA.cm-2. Results from 150-nm junctions are also given and are compared with BF2ion implantation.
Keywords :
Chemical vapor deposition; Conductivity; Current density; Diodes; Etching; Implants; P-n junctions; Rapid thermal annealing; Temperature sensors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26564
