Title :
A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact
Author :
Sturm, James C. ; McVittie, James P. ; Gibbons, James F. ; Pfeiffer, L.
Author_Institution :
Princeton University, Princeton, NJ
fDate :
3/1/1987 12:00:00 AM
Abstract :
A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 Ω.
Keywords :
Bipolar transistors; Contacts; Etching; Fabrication; Implants; Lithography; MOSFETs; Resists; Silicon on insulator technology; Surface resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26567
