Improved GaAs power FET Performance using Be Co-implantation

Be co-implantation following the standard Si donor implantation improves the performance of directly implanted GaAs power FET´s. The doping profile abruptness increases from 88 to 48 nm/decade. The device efficiency increases by at least 15 percent and the maximum output power by about 10 percent due to reduction in gate-drain breakdown current.