DocumentCode :
1120239
Title :
5C3 - GaAs as an electrooptic modulator at 10.6 microns
Author :
Yariv, A. ; Mead, C.A. ; Parker, J.V.
Author_Institution :
California Institute of Technology, Pasadena, CA, USA
Volume :
2
Issue :
8
fYear :
1966
fDate :
8/1/1966 12:00:00 AM
Firstpage :
243
Lastpage :
245
Abstract :
The electrooptic properties of a number of semiconductors were investigated. Of particular interest was the possibility of using these materials for modulation of infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a Co2 , 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at 
.
.Keywords :
Conducting materials; Conductivity; Electromagnetic wave absorption; Electrooptic modulators; Gallium arsenide; Lasers and electrooptics; Optical attenuators; Optical materials; Power lasers; Semiconductor materials;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1966.1074037
Filename :
1074037
Link To Document :
