• DocumentCode
    1120239
  • Title

    5C3 - GaAs as an electrooptic modulator at 10.6 microns

  • Author

    Yariv, A. ; Mead, C.A. ; Parker, J.V.

  • Author_Institution
    California Institute of Technology, Pasadena, CA, USA
  • Volume
    2
  • Issue
    8
  • fYear
    1966
  • fDate
    8/1/1966 12:00:00 AM
  • Firstpage
    243
  • Lastpage
    245
  • Abstract
    The electrooptic properties of a number of semiconductors were investigated. Of particular interest was the possibility of using these materials for modulation of infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a Co2, 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at \\lambda > 10\\mu .
  • Keywords
    Conducting materials; Conductivity; Electromagnetic wave absorption; Electrooptic modulators; Gallium arsenide; Lasers and electrooptics; Optical attenuators; Optical materials; Power lasers; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1966.1074037
  • Filename
    1074037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120239