DocumentCode :
1120296
Title :
Accelerated testing of time-dependent breakdown of SiO2
Author :
Chen, I.C. ; Hu, Chenming
Author_Institution :
University of California, Berkeley, CA
Volume :
8
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
140
Lastpage :
142
Abstract :
Electric-field acceleration factor β is the slope of the 
versus Eox curve, where tBD is the time to breakdown at oxide field Eox . We report that β is not a constant but proportional to 
. This is the main cause of the wide divergence of β values reported in the literature. The reported oxide thickness dependence of β is believed to be a result of the higher electron trap densities in thicker oxides. Oxide lifetime extrapolation using , or better, 
against 
plots is more accurate and has a theoretical basis. Highly accelerated oxide testing appears to be feasible especially for very thin oxides.
versus E . This is the main cause of the wide divergence of β values reported in the literature. The reported oxide thickness dependence of β is believed to be a result of the higher electron trap densities in thicker oxides. Oxide lifetime extrapolation using , or better, against plots is more accurate and has a theoretical basis. Highly accelerated oxide testing appears to be feasible especially for very thin oxides.Keywords :
Acceleration; Charge carrier processes; Electric breakdown; Electron traps; Fabrication; Life estimation; Numerical models; Stress; Testing; Tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26580
Filename :
1487130
Link To Document :
