Title :
Three-dimensional distribution of CMOS latch-up current
Author :
Sangiorgi, Enrico ; Ricco, Bruno ; Selmi, L.
Author_Institution :
University of Bologna, Bologna, Italy
fDate :
4/1/1987 12:00:00 AM
Abstract :
This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi-" two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.
Keywords :
Analytical models; CMOS technology; Circuit testing; Current measurement; Doping; Numerical simulation; Semiconductor device modeling; Solid modeling; Thyristors; Two dimensional displays;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26585
