• DocumentCode
    1120411
  • Title

    InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy

  • Author

    Campbell, Joe C. ; Tsang, Won-Tien ; Qua, G.J.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ
  • Volume
    8
  • Issue
    4
  • fYear
    1987
  • fDate
    4/1/1987 12:00:00 AM
  • Firstpage
    171
  • Lastpage
    173
  • Abstract
    We describe InP/In0.53Ga0.47As heterojunction phototransistors (HPT´s) grown by chemical beam epitaxy (CBE). These devices exhibit high gain ( > 150) at signal levels as low as - 50 dBm. Compared to earlier devices of this type, the gain is relatively independent of the optical signal level. This is due primarily to the improved quality of the emitter-base heterojunction interface which, for these HPT´s, is characterized by an ideality factor of 1.14. At an incident power level of -21 dBm the bandwidth is 14 MHz and the gain-bandwidth product is 4.8 GHz.
  • Keywords
    Dark current; Etching; Gain measurement; Indium phosphide; Optical devices; Optical receivers; Optical saturation; Optical sensors; Phototransistors; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26591
  • Filename
    1487141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120411