Title :
InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy
Author :
Campbell, Joe C. ; Tsang, Won-Tien ; Qua, G.J.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
fDate :
4/1/1987 12:00:00 AM
Abstract :
We describe InP/In0.53Ga0.47As heterojunction phototransistors (HPT´s) grown by chemical beam epitaxy (CBE). These devices exhibit high gain ( > 150) at signal levels as low as - 50 dBm. Compared to earlier devices of this type, the gain is relatively independent of the optical signal level. This is due primarily to the improved quality of the emitter-base heterojunction interface which, for these HPT´s, is characterized by an ideality factor of 1.14. At an incident power level of -21 dBm the bandwidth is 14 MHz and the gain-bandwidth product is 4.8 GHz.
Keywords :
Dark current; Etching; Gain measurement; Indium phosphide; Optical devices; Optical receivers; Optical saturation; Optical sensors; Phototransistors; Stimulated emission;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26591
