DocumentCode
1120423
Title
Design considerations of high-performance narrow-emitter bipolar transistors
Author
Tang, Denny D. ; Chen, Tze-Chiang ; Chuang, Ching-Te ; Li, G.P. ; Stork, Johannes M C ; Ketchen, Mark B. ; Hackbarth, E. ; Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
8
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
174
Lastpage
175
Abstract
The control of the lateral diffusion of the extrinsic base is a key issue in the downscaling of high-speed bipolar transistors for achieving the lowest base resistance without altering the shallow impurity profile of the intrinsic region. This letter will present the effects of lateral encroachment of the extrinsic-base dopant on the characteristics of transistors with submicrometer emitter stripe width, measurement of the amount of encroachment, and its relationship to the vertical profile.
Keywords
Bipolar transistors; Current density; Degradation; Electrical resistance measurement; Fabrication; Helium; Implants; Impurities; MOSFETs; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26592
Filename
1487142
Link To Document