• DocumentCode
    1120507
  • Title

    Thin polyoxide films grown by rapid thermal processing

  • Author

    Alvi, N.S. ; Lee, S.K. ; Kwong, Dim-Lee

  • Author_Institution
    Delco Electronics Corporation, Kokomo, IN
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    197
  • Lastpage
    199
  • Abstract
    The growth of thin (80-200 Å) oxide films by rapid thermal processing (RTP) on LPCVD poly and amorphous silicon is reported. Oxide growth kinetics are affected by dopant concentration, implant species, and preoxidation anneal conditions. Breakdown fields > 11 MV/ cm have been measured. Constant current stress measurements indicate a higher rate of negative charge trapping in oxides grown on top of polysilicon as compared to amorphous silicon.
  • Keywords
    Amorphous silicon; Breakdown voltage; Capacitors; Current measurement; Hafnium; Implants; Rapid thermal annealing; Rapid thermal processing; Stress measurement; Thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26601
  • Filename
    1487151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120507