Ultrafast superconductive switch

Author

Gershenzon, E.M. ; Gol´tsman, Gregory N. ; Dzardanov, A.L. ; Zorin, M.A.

Author_Institution

Dept. of Phys., State Pedagogical Univ., Moscow, USSR

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

2844

Lastpage

2846

Abstract

The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time τ and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, τ measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5×2×0.15 μm², W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample

Keywords

barium compounds; high-temperature superconductors; niobium; superconducting devices; superconducting thin films; switches; yttrium compounds; 0.15 micron; 0.3 to 3 ns; 10 mW; 2 micron; 4.2 K; 77 K; Nb microstrips; Nb switches; YBaCuO switches; bias current pulses; dimensions; driving power; electron heating; high temperature superconductors; infrared radiation; radiation pulses; switching time; Electrons; Heating; Niobium; Pulse measurements; Strips; Superconducting films; Superconducting transition temperature; Superconductivity; Switches; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133801

Filename

133801