Title :
Hot-carrier drifts in submicrometer p-channel MOSFET´s
Author :
Weber, W. ; Lau, F.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
5/1/1987 12:00:00 AM
Abstract :
Hot-carrier-induced shifts in p-channel MOSFET operating characteristics have been observed down to drain voltages of - 6 V. Cases are discussed in which p-MOSFET´s show up to two orders of magnitude larger degradation than corresponding n-MOSFET´s. The shifts include current and threshold voltage increases. From dependences on stress gate voltage, stress drain voltage, time, and substrate current, the hot-carrier origin of the shifts is specified in detail.
Keywords :
CMOS technology; Degradation; Electric variables; Hot carriers; MOSFET circuits; Physics; Research and development; Stress; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26605
