Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Author

Gaillardin, M. ; Martinez, Manuel ; Paillet, P. ; Andrieu, F. ; Girard, S. ; Raine, M. ; Marcandella, C. ; Duhamel, O. ; Richard, N. ; Faynot, O.

Author_Institution

DIF, CEA, Arpajon, France

Volume

60

Issue

4

fYear

2013

fDate

Aug. 2013

Firstpage

2583

Lastpage

2589

Abstract

In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.

Keywords

elemental semiconductors; ionisation; radiation hardening (electronics); silicon; silicon-on-insulator; transistors; FDSOI; GP; Si; TID; UTBOX; fully depleted silicon-on-insulator high-k-metal gate technology; ground plane; ionizing radiation experiment; size 20 nm; total ionizing dose response; ultrathin buried-oxide; ultrathin transistor; Charge carrier processes; Couplings; Logic gates; Radiation effects; Silicon; Substrates; Transistors; Fully d; SOI; TID; nanometer scale; radiation effects; ultra-Thin BOX (UTBOX);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2249093

Filename

6494701