• DocumentCode
    1120606
  • Title

    A self-aligned enhancement-mode AlGaAs/InP MISFET

  • Author

    Del Alamo, Jesus A. ; Mizutani, Takashi

  • Author_Institution
    NTT Laboratories, Kanagawa, Japan
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    220
  • Lastpage
    222
  • Abstract
    An enhancement-mode insulated-gate field-effect transistor (FET) has been fabricated by a self-aligned technique on semi-insulating InP substrate with an AlGaAs gate barrier grown by molecular beam epitaxy (MBE). A device with a gate length of 1 µm exhibited a transconductance of 134 mS/mm and a threshold voltage of 0.9 V. The characteristics are insensitive to light down to 77 K and hysteresis is completely absent. The performance of this device shows that the fabrication of enhancement-mode devices on severely lattice-mismatched heterostructures is feasible.
  • Keywords
    FETs; Fabrication; Hysteresis; Indium phosphide; Insulation; MISFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26609
  • Filename
    1487159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120606