Title :
A high-speed frequency divider using n+-Ge Gate AlGaAs/GaAs MISFET´s
Author :
Fujita, Shuichi ; Hirano, Matoto ; Maezawa, Koichi ; Mizutani, Takashi
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
A high-speed divide-by-four static frequency divider is fabricated using n+ -Ge gate AlGaAs/GaAs heterostructure MISFET´s. The divider circuit consists of two master-slave T-type flip-flops (T-FF´s) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-µm gate FET´s.
Keywords :
Electrons; FETs; Fabrication; Flip-flops; Frequency conversion; Gallium arsenide; Logic circuits; MISFETs; Master-slave; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26611