مرکز منطقه ای اطلاع رساني علوم و فناوري - <formula formulatype="inline"> <img src="/images/tex/20671.gif" alt="\\hbox {Ni}(\\hbox {Ge}_{1 - x}\\hbox {Sn}_{x})"> </formula> Ohmic Contact Formation on N-Type <formula formulatype="inline"> <img src="/images/tex/20701.gif" alt="\\hbox {Ge}_{1

Title :

$\\hbox {Ni}(\\hbox {Ge}_{1 - x}\\hbox {Sn}_{x})$ Ohmic Contact Formation on N-Type $\\hbox {Ge}_{1 - x}\\h</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Yi Tong ; Genquan Han ; Bin Liu ; Yue Yang ; Lanxiang Wang ; Wei Wang ; Yee-Chia Yeo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>60</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Feb. 2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>746</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>752</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>The physics of ohmic contact formation for nickel stanogermanide [ Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>)] on n-type germanium-tin (n-Ge<sub>1-x</sub>Sn<sub>x</sub>) was investigated. Low-resistivity Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>) was formed on Ge<sub>1-x</sub>Sn<sub>x</sub> using a 350 °C 30-s anneal. Ion implantation of selenium (Se) or sulfur (S) into n-Ge<sub>1-x</sub>Sn<sub>x</sub> followed by nickel stanogermanidation led to the segregation of Se or S at the Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>)/n-Ge<sub>1-x</sub>Sn<sub>x</sub> interface. Low effective electron Schottky barrier height (Φ<i>Bn</i>) of 0.12 and 0.11 eV was achieved for Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>)/n-Ge<sub>1-x</sub>Sn<sub>x</sub> contacts with Se and S segregation, respectively. A simulation study was also performed to explain the experimental observations. Se and S atoms could be modeled as donor-like traps near the Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>)/n-Ge<sub>1-x</sub>Sn<sub>x</sub> interface, modifying the potential profile near the contact and giving rise to trap-assisted tunneling to increase the reverse leakage current for ohmic contact formation.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Schottky barriers; annealing; germanium; ion implantation; nickel compounds; ohmic contacts; selenium; sulphur; tin; tunnelling; Ni(Ge<sub>1-x</sub>Sn<sub>x</sub>)-Ge<sub>1-x</sub>Sn<sub>x</sub>; annealing; donor-like traps; electron volt energy 0.11 eV; low-effective electron Schottky barrier height; n-type germanium-tin; nickel stanogermanidation; ohmic contact formation; reverse leakage current; selenium ion implantation; selenium segregation; sulfur ion implantation; sulfur segregation; temperature 350 degC; time 30 s; trap-assisted tunneling; Electron traps; Implants; Nickel; Ohmic contacts; Schottky barriers; Substrates; Tunneling; Nickel stanogermanide; Schottky barrier height (SBH); segregation; selenium (Se); sulfur (S);</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2012.2233204</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6401184</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=112067' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=112067</a></div> </div> </div> <div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=$