• DocumentCode
    1120689
  • Title

    A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM´s

  • Author

    Dungan, T.E. ; Cooper, James A., Jr. ; Melloch, Michael R.

  • Author_Institution
    Purdue University, West Lafayette, IN
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    243
  • Lastpage
    245
  • Abstract
    We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility of MODFET- or MESFET-compatible single-transistor buried-well dynamic RAM´s capable of operating at or above room temperature.
  • Keywords
    Capacitance; Current measurement; DRAM chips; Electrons; Forward contracts; Gallium arsenide; MODFET circuits; Substrates; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26617
  • Filename
    1487167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120689