• DocumentCode
    1120756
  • Title

    The ALDMOST: A new power MOS transistor

  • Author

    Habib, Serag E.

  • Author_Institution
    Cairo University, Giza, Egypt
  • Volume
    8
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    257
  • Lastpage
    259
  • Abstract
    A new lateral power MOSFET structure, named the Accumulation LDMOST (ALDMOST), is proposed. It relies on creation of an accumulation layer along the surface of the drift region. This surface accumulation layer exists only in the ON state. Simulation studies indicate that the product of the ON resistance by the area ( R_{on}.A ) of the ALDMOST is one-third to one-fifth that of a conventional LDMOST rated at the same breakdown voltage.
  • Keywords
    Conductivity; Dielectrics and electrical insulation; Electrodes; Fingers; High-K gate dielectrics; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Surface resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26622
  • Filename
    1487172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120756