• DocumentCode
    1120770
  • Title

    Complementary GaAs MESFET logic gates

  • Author

    Baier, Steven M. ; Lee, Gi-young ; Chung, H.K. ; Fure, B.J. ; Mactaggart, R.

  • Author_Institution
    Honeywell Physical Sciences Center, Bloomington, MN
  • Volume
    8
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    260
  • Lastpage
    262
  • Abstract
    Operation of the first complementary GaAs MESFET (CMES) logic gates is reported. Direct-coupled inverters utilizing p- and n-channel ion-implanted MESFET´s demonstrate good transfer characteristics with less than 5-µW power dissipation per gate. Propagation delays as small as 54 ps are attained in 13-stage ring oscillators at room temperature with speed-power products as small as 6 fJ.
  • Keywords
    CMOS logic circuits; Gallium arsenide; Implants; Inverters; Logic devices; Logic gates; MESFETs; MODFET circuits; Power dissipation; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26623
  • Filename
    1487173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120770