Title :
Complementary GaAs MESFET logic gates
Author :
Baier, Steven M. ; Lee, Gi-young ; Chung, H.K. ; Fure, B.J. ; Mactaggart, R.
Author_Institution :
Honeywell Physical Sciences Center, Bloomington, MN
fDate :
6/1/1987 12:00:00 AM
Abstract :
Operation of the first complementary GaAs MESFET (CMES) logic gates is reported. Direct-coupled inverters utilizing p- and n-channel ion-implanted MESFET´s demonstrate good transfer characteristics with less than 5-µW power dissipation per gate. Propagation delays as small as 54 ps are attained in 13-stage ring oscillators at room temperature with speed-power products as small as 6 fJ.
Keywords :
CMOS logic circuits; Gallium arsenide; Implants; Inverters; Logic devices; Logic gates; MESFETs; MODFET circuits; Power dissipation; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26623
