Title :
A self-aligned ohmic metallization GaAs-Gate FET with integrated coupling diode
Author :
Yuen, Albart T. ; Hu, Evelyn L. ; Long, Stephen I. ; Sullivan, Gery J.
Author_Institution :
University of California, Santa Barbara, CA
fDate :
6/1/1987 12:00:00 AM
Abstract :
A novel processing scheme has been demonstrated for the fabrication of GaAs/AlGaAs semiconductor-insulator-semiconductor FET´s (SISFET´s). It was shown that a self-aligned ohmic (SAO) metal deposition could be used, without any additional ion implantation, to contact the two-dimensional electron gas (2DEG) of the SISFET. The process incorporates a coupling diode epitaxially grown atop the semiconductor gate (CDFL scheme [1]). Also, a depletion-mode MESFET was fabricated within the GaAs-gate layer in order to demonstrate the feasibility of a SISFET/MESFET inverter.
Keywords :
Electrons; FETs; Inverters; Ion implantation; MESFETs; MODFETs; Metallization; Schottky diodes; Semiconductor diodes; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26627
